agilent hcpl-181 phototransistor optocoupler smd mini-flat type data sheet features ? current transfer ratio (ctr: min. 50% at i f = 5 ma, v ce = 5 v) ? high input-output isolation voltage (v iso = 3750 vrms) ? high collector-emitter voltage (v ceo = 80 v) ? response time (t r : typ., 4 m s at v ce = 2 v, i c = 2 ma, r l = 100 w ) ? mini-flat package (2.0 mm profile) in tape and reel package ? ul approved ? csa approved ? iec/en/din en 60747-5-2 approved ? options available: C iec/en/din en 60747-5-2 approvals (060) applications ? i/o interfaces for computers ? system appliances, measuring in- struments ? signal transmission between cir- cuits of different potentials and impedances ? feedback circuit in power supply description the hcpl-181 contains a light emitting diode optically coupled to a phototransistor. it is packaged in a 4-pin mini-flat smd package with a 2.0 mm profile. the small dimension of this product allows significant space saving. the package volume is 30% smaller than that of conventional dip type. input-output isolation voltage is 3750 vrms. response time, t r , is typically 4 m s and minimum ctr is 50% at input current of 5 ma. functional diagram ordering information specify part number followed by option number (if desired). hcpl-181-xxxx option number 060 = iec/en/din en 60747-5-2 option 00a = rank mark a 00b = rank mark b 00c = rank mark c 00d = rank mark d xxxe =lead free option schematic 4 3 12 pin no. and internal
connection diagram 1. anode
2. cathode 3. emitter
4. collector 1 2 anode cathode v f + i f 4 3 collector emitter i c caution: it is advised that normal static precautions be taken in handling and assembly of this component to prevent damage and/or degradation which may be induced by esd.
2 electrical specifications (t a = 25?c) parameter symbol min. typ. max. units test conditions forward voltage v f C 1.2 1.4 v i f = 20 ma reverse current i r CC10 m av r = 4 v terminal capacitance c t C 30 250 pf v = 0, f = 1 khz collector dark current i ceo C C 100 na v ce = 20 v collector-emitter breakdown voltage bv ceo 80CCvi c = 0.1 ma, i f = 0 emitter-collector breakdown voltage bv eco 6CCvi e = 10 m a, i f = 0 collector current i c 2.5 C 30 ma i f = 5 ma, v ce = 5 v *current transfer ratio ctr 50 C 600 % collector-emitter saturation voltage v ce(sat) C C 0.2 v i f = 20 ma, i c = 1 ma response time (rise) t r C418 m sv cc = 2 v, i c = 2 ma response time (fall) t f C318 m sr l = 100 w isolation resistance r iso 5 x 10 10 1 x 10 11 C w dc 500 v 40 ~ 60% r.h. floating capacitance c f C 0.6 1.0 pf v = 0, f = 1 mhz absolute maximum ratings (t a = 25?c) storage temperature, t s C55?c to +155?c operating temperature, t a C55?c to +100?c lead solder temperature, max. 260?c for 10 s (1.6 mm below seating plane) average forward current, i f 50 ma reverse input voltage, v r 6 v input power dissipation, p i 70 mw collector current, i c 50 ma collector-emitter voltage, v ceo 80 v emitter-collector voltage, v eco 6 v collector power dissipation 150 mw total power dissipation 170 mw isolation voltage, v iso 3750 vrms (ac for 1 minute, r.h. = 40 ~ 60%) * ctr = x 100% i c i f package outline drawing rank mark ctr (%) conditions a 80 ~ 160 i f = 5 ma, b 130 ~ 260 c 200 ~ 400 d 300 ~ 600 v ce = 5 v, t a = 25 ? c dimensions in millimeters and (inches) 4.40 ?0.2 3.60 ?0.3 2.00 ?0.2 5.30 ?0.3 0.2 ?0.05 7.00 0.40 ?0.1 0.10 ?0.1 181v yww 2.54
?0.25 type number option code
for option 060
only rank mark date code + 0.2
?0.7 0.5 + 0.4
+ 0.2
3 figure 1. forward current vs. temperature. figure 2. collector power dissipation vs. temperature. figure 3. collector-emitter saturation voltage vs. forward current. figure 4. forward current vs. forward voltage. figure 5. current transfer ratio vs. forward current. figure 6. collector current vs. collector- emitter voltage. figure 7. relative current transfer ratio vs. temperature. figure 8. collector-emitter saturation voltage vs. temperature. figure 9. collector dark current vs. temperature. i f ?forward current ?ma 0 t a ?ambient temperature ?? 75 125 50 25 10 40 0 50 100 -55 60 30 20 p c ?collector power dissipation ?mw 0 t a ?ambient temperature ?? 100 50 200 150 75 125 25 0 50 100 -55 0 i f ?forward current ?ma 10 15 2 5 0 1 3 4 5 6 v ce(sat.) ?collector-emitter
saturation voltage ?v t a = 25? i c = 0.5 ma i c = 1 ma i c = 3 ma i c = 5 ma i c = 7 ma i f ?forward current ?ma 1 v f ?forward voltage ?v 2.0 3.0 10 5 500 1.0 0 t a = 75? 0.5 1.5 2.5 2 20 50 100 200 t a = 50? t a = 25? t a = 0? t a = -25? 0 i f ?forward current ?ma 10 50 40 200 2 0 20 60 120 140 160 ctr ?current transfer ratio ?% v ce = 5 v
t a = 25? 80 100 180 520 i c ?collector current ?ma 0 v ce ?collector-emitter voltage ?v 69 40 20 50 3 0 p c (max.) t a = 25? i f = 30 ma i f = 25 ma i f = 10 ma i f = 5 ma 30 10 i f = 20 ma i f = 15 ma 12 45 78 v ce(sat.) ?collector-emitter
saturation voltage ?v 0 0.06 0.02 0.10 i c = 1 ma i f = 20 ma t a ?ambient temperature ?? 60 40 80 100 20 0.04 0.08 i ceo ?collector dark current ?na t a ?ambient temperature ?? 1 10 100 1000 80 60 40 100 20 10000 v ce = 20 v relative current transfer ratio ?% 0 100 50 150 v ce = 2 v i f = 5 ma t a ?ambient temperature ?? 80 40 60 100 20
4 v cc r d input r l output input output 10% 90% t t t t d r s f figure 10. response time vs. load resistance. figure 11. frequency response. test circuit for response time test circuit for frequency response v cc r d r l output ~ voltage gain av ?db f ?frequency ?khz 1 20 500 5 20 10 21050 0.5 0 100 200 r l = 10 k w r l = 1 k w r l = 100 w v ce = 2 v
i c = 2 ma
t a = 25? response time ?? 0.1 r l ?load resistance ?k w 0.1 5 1 0.5 0.2 0.5 500 0.2 2 10 0.05 2 v ce = 2 v
i c = 2 ma
t a = 25? tf tr 1 5 10 20 50 100 200 ts td
5 temperature profile of soldering reflow 1) one time soldering reflow is recommended within the condition of temperature and time profile shown below. 2) when using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. keep the temperature on the package of the device within the condition of (1) above. 2 minutes 25? 200? 230? 180? 1.5 minutes 1 minute 30 seconds 1 minute
www.agilent.com/semiconductors for product information and a complete list of distributors, please go to our web site. for technical assistance call: americas/canada: +1 (800) 235-0312 or (916) 788-6763 europe: +49 (0) 6441 92460 china: 10800 650 0017 hong kong: (+65) 6756 2394 india, australia, new zealand: (+65) 6755 1939 japan: (+81 3) 3335-8152 (domestic/interna- tional), or 0120-61-1280 (domestic only) korea: (+65) 6755 1989 singapore, malaysia, vietnam, thailand, philippines, indonesia: (+65) 6755 2044 taiwan: (+65) 6755 1843 data subject to change. copyright ? 2003 agilent technologies, inc. obsoletes 5988-8696en november 4, 2003 5989-0306en
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